ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

PRODUCT DESCRIPTION The G Series is a line of miniature, versatile component level building blocks that provide up to 6kV, positive or negative, in a compact PC mount package. The isolated output is directly proportional to the input, and is linear from approximately 0.7 volts in. Excellent flter

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XPPOWER

Single Pole Single Throw - Normally Open

FEATURES Low stable contact resistance for high carry current and low voltage drop Low loss in RF circuits Mounting options in any axis

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SENSATA

森萨塔

Rack and Panel Connectors Side Mount

FEATURES • Body components available with any desired pin and socket combination • Contacts float in molding to aid in aligning and in withstanding vibration • Polarization accomplished by reversed pin and socket combination • Barriers for increased creepage distance • Thru hold permits us

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VISHAYVishay Siliconix

威世威世科技公司

Silicon Z?밆iodes

FEATURES • High reliability • Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads • Wave and reflow solderable • Glass passivated junction

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TAYCHIPST

泰迪斯电子

丝印：2002A；Package：SOT-23-6L；N-Channel Enhancement Mode Power MOSFET

Description The G2002A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体

丝印：G2003A；Package：SOT-23-3L；Power switching application

Description The G2003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switching application

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GOFORD

谷峰半导体

丝印：G2009G；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G2009G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体

丝印：G200N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G200N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体

丝印：G200N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G200N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体

丝印：G200P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G200P04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体