2SK2158

Marking：G23；MOS FIELD EFFECT TRANSISTOR

N-CHANNELMOSFET FORHIGH-SPEEDSWITCHING The2SK2158isanN-channelverticaltypeMOSFETfeaturing anoperatingvoltageaslowas1.5V.Becauseitcanbe drivenonalowvoltageanditisnotnecessarytoconsider drivingcurrent,the2SK2158issuitableforuseinlow-voltage portabl

2SK2158A-T1B-AT

Marking：G23；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNELMOSFET FORHIGH-SPEEDSWITCHING The2SK2158AisanN-channelverticaltypeMOSFETfeaturinganoperatingvoltageaslowas1.5V.Becauseitcan bedrivenonalowvoltageanditisnotnecessarytoconsiderdrivingcurrent,the2SK2158Aissuitableforuseinlowvoltage portables

2SK2158A-T2B-AT

Marking：G23；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNELMOSFET FORHIGH-SPEEDSWITCHING The2SK2158AisanN-channelverticaltypeMOSFETfeaturinganoperatingvoltageaslowas1.5V.Becauseitcan bedrivenonalowvoltageanditisnotnecessarytoconsiderdrivingcurrent,the2SK2158Aissuitableforuseinlowvoltage portables

2SK3749

Marking：G27；Package：SC-70；MOS FIELD EFFECT TRANSISTOR

N-CHANNELMOSFETFORHIGH-SPEEDSWITCHIG DESCRIPTION The2SK3749isanN-channelverticalMOSFET.Because itcanbedrivenbyavoltageaslowas2.5Vanditisnot necessarytoconsideradrivecurrent,thisFETisidealasan actuatorforlow-currentportablesystemssuchasheadphone

AP2115R5-1.2TRG1

Marking：G22G；Package：SOT-89-5；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min.) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ.) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ.), 0.

AP2115R5-1.8TRG1

Marking：G22H；Package：SOT-89-5；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min.) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ.) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ.), 0.

AP2115R5A-1.2TRG1

Marking：G27D；Package：SOT-89-5；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min.) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ.) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ.), 0.

AP2115R5A-1.8TRG1

Marking：G27G；Package：SOT-89-5；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min.) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ.) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ.), 0.

AP2202K-2.5TRG1

Marking：G2D；Package：SOT-23-5；150mA RF ULDO REGULATOR

Features -Upto150mAOutputCurrent -LowStandbyCurrent -LowDropoutVoltage:VDROP=165mVat150mA -HighOutputAccuracy:±1 -GoodRippleRejectionAbility:75dBat100HzandIOUT=100μA -TightLoadandLineRegulation -LowTemperatureCoefficient -OvercurrentProtection -Th

AP2202K-2.6TRG1

Marking：G2E；Package：SOT-23-5；150mA RF ULDO REGULATOR

Features -Upto150mAOutputCurrent -LowStandbyCurrent -LowDropoutVoltage:VDROP=165mVat150mA -HighOutputAccuracy:±1 -GoodRippleRejectionAbility:75dBat100HzandIOUT=100μA -TightLoadandLineRegulation -LowTemperatureCoefficient -OvercurrentProtection -Th