NCP140BMXD330TCG

Marking：G2；Package：XDFN4；LDO Voltage Regulator - Capacitor Free, Low Noise 150 mA

NCP164CMLADJTCG

Marking：G2；Package：DFNW83x3；LDO Regulator, 300mA, Low Dropout Voltage, Ultra Low Noise, High PSRR with Power Good

PMN70EPE

Marking：G2；Package：TSOP6；30 V, P-channel Trench MOSFET

UMG2N

Marking：G2；Package：SOT-353；Emitter common (dual digital transistors)

UMG2N

Marking：G2；Package：SOT-353；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

UMG2N

Marking：G2；Package：SOT-353；Emitter common (dual digital transistors)

UMG2N

Marking：G2；Package：SOT-353；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors

2SK1658

Marking：G20；Package：SC-70；MOS FIELD EFFECT TRANSISTOR

N-CHANNELMOSFET FORSWITCHING DESCRIPTION The2SK1658isanN-channelverticaltypeMOSFETwhich canbedrivenby2.5Vpowersupply. AstheMOSFETislowGateLeakageCurrent,itissuitablefor appliancesincludingFilterCircuit. FEATURES •DirectlydrivenbyICshavinga3Vpowe

2SK1958

Marking：G21；MOS FIELD EFFECT TRANSISTOR

N-CHANNELMOSFETFORHIGH-SPEEDSWITCHING The2SK1958isanN-channelverticalMOSFET.Because itcanbedrivenbyavoltageaslowas1.5Vanditisnot necessarytoconsideradrivecurrent,thisFETisidealasan actuatorforlow-currentportablesystemssuchasheadphone stereosand

2SK2090

Marking：G22；MOS FIELD EFFECT TRANSISTOR

N-CHANNELMOSFETFORHIGH-SPEEDSWITCHING The2SK2090isanN-channelverticalMOSFET.Because itcanbedrivenbyavoltageaslowas2.5Vanditisnot necessarytoconsideradrivecurrent,thisFETisidealasan actuatorforlow-currentportablesystemssuchasheadphone stereosand