丝印：G130；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：G130N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The G130N06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：969.35 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G130N06；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The G130N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06846 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G130N06D；Package：SOP-8Dual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G130N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：938.5 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G130N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The G130N06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：969.35 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G130N06；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The G130N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06846 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G130N06D；Package：SOP-8Dual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G130N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：938.5 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

SIDACs

SIDACs IT(RSM) = 1.0 Amperes VBO = 95 thru 280 Volts

文件：26.44 Kbytes 页数：1 Pages

EIC

Silicon Z?밆iodes

FEATURES • High reliability • Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads • Wave and reflow solderable • Glass passivated junction

文件：1.98202 Mbytes 页数：3 Pages

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

SIDACs

SIDACs IT(RSM) = 1.0 Amperes VBO = 95 thru 280 Volts

文件：84.13 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司