ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

PRODUCT DESCRIPTION The G Series is a line of miniature, versatile component level building blocks that provide up to 6kV, positive or negative, in a compact PC mount package. The isolated output is directly proportional to the input, and is linear from approximately 0.7 volts in. Excellent flter

文件：716.83 Kbytes 页数：10 Pages

XPPOWER

丝印：g04；Package：SOT753；Inverter

1. General description XC7SET04 is a high-speed Si-gate CMOS devices. It provides an inverting buffer. 2. Features and benefits • Symmetrical output impedance • High noise immunity • Low power dissipation • Balanced propagation delays • TTL input levels • ESD protection: • HBM JESD22-A114

文件：198.32 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：G040P02；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G040P02D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：610.37 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G040P02；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G040P02K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：596.62 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G040P02；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G040P02T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：907.74 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G040P04；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G040P04M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：915.68 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G040P04；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G040P04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：915.23 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G048N04；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G048N04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：978.33 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G04P10；Package：SOT-223；P-Channel Enhancement Mode Power MOSFET

Description The G04P10HE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：622.46 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

PRODUCT DESCRIPTION The G Series is a line of miniature, versatile component level building blocks that provide up to 6kV, positive or negative, in a compact PC mount package. The isolated output is directly proportional to the input, and is linear from approximately 0.7 volts in. Excellent flter

文件：716.83 Kbytes 页数：10 Pages

XPPOWER