Green Mode onsemi Buck

Description The FSL336LR integrated Pulse Width Modulator (PWM) and SENSEFET® is specifically designed for high−performance offline buck, buck−boost, and non−isolation flyback Switched Mode Power Supplies (SMPS) with minimal external components. This device integrates a high−voltage power reg

文件：274.43 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

1000 V SenseFET Integrated Power Switch

Features • Built−in Avalanche Rugged 1000 V SenseFET • Precise Fixed Operating Frequency: 50 kHz • VCC can be Supplied from either Bias−winding or Self−biasing • Soft Burst−Mode Operation Minimizing Audible Noise • Random Frequency Fluctuation for Low EMI • Pulse−by−Pulse Current Limit • Va

文件：394.77 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

丝印：L4110LR；Package：7-LSOP；1000 V SenseFET Integrated Power Switch

Features • Built−in Avalanche Rugged 1000 V SenseFET • Precise Fixed Operating Frequency: 50 kHz • VCC can be Supplied from either Bias−winding or Self−biasing • Soft Burst−Mode Operation Minimizing Audible Noise • Random Frequency Fluctuation for Low EMI • Pulse−by−Pulse Current Limit • Va

文件：394.77 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

丝印：L4110LR；Package：7-DIP；1000 V SenseFET Integrated Power Switch

Features • Built−in Avalanche Rugged 1000 V SenseFET • Precise Fixed Operating Frequency: 50 kHz • VCC can be Supplied from either Bias−winding or Self−biasing • Soft Burst−Mode Operation Minimizing Audible Noise • Random Frequency Fluctuation for Low EMI • Pulse−by−Pulse Current Limit • Va

文件：394.77 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

文件：46.85 Kbytes 页数：8 Pages

INTERSIL

2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

文件：46.85 Kbytes 页数：8 Pages

INTERSIL

2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

文件：46.85 Kbytes 页数：8 Pages

INTERSIL

2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

文件：46.85 Kbytes 页数：8 Pages

INTERSIL

2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

文件：46.85 Kbytes 页数：8 Pages

INTERSIL

2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

文件：46.85 Kbytes 页数：8 Pages

INTERSIL