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型号	下载订购	功能描述	制造商上传企业	LOGO
FSL13A0D	文件：71.78 Kbytes Page：8 Pages	9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：71.78 Kbytes 页数：8 Pages	INTERSIL	INTERSIL
FSL13A0D1	文件：71.78 Kbytes Page：8 Pages	9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：71.78 Kbytes 页数：8 Pages	INTERSIL	INTERSIL
FSL13A0D3	文件：71.78 Kbytes Page：8 Pages	9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：71.78 Kbytes 页数：8 Pages	INTERSIL	INTERSIL
FSL13A0R	文件：71.78 Kbytes Page：8 Pages	9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：71.78 Kbytes 页数：8 Pages	INTERSIL	INTERSIL
FSL13A0R1	文件：71.78 Kbytes Page：8 Pages	9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：71.78 Kbytes 页数：8 Pages	INTERSIL	INTERSIL
FSL13A0R3	文件：71.78 Kbytes Page：8 Pages	9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：71.78 Kbytes 页数：8 Pages	INTERSIL	INTERSIL
FSL13A0R4	文件：71.78 Kbytes Page：8 Pages	9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：71.78 Kbytes 页数：8 Pages	INTERSIL	INTERSIL
FSL214	文件：57.21 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev 文件：57.21 Kbytes 页数：8 Pages	INTERSIL	INTERSIL
FSL214D	文件：57.21 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev 文件：57.21 Kbytes 页数：8 Pages	INTERSIL	INTERSIL
FSL214D1	文件：57.21 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev 文件：57.21 Kbytes 页数：8 Pages	INTERSIL	INTERSIL

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技术参数

频率范围：
70Hz~700Hz
阻抗：
7.32Ω
谐振频率：
73.93Hz
额定功率：
220W
直径(φD)：
209.2mm
高度：
95.95mm

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市华斯顿科技有限公司	FSL		25+23+	原厂原包	23976	绝对原装正品现货,全新深圳原装进口现货	询价
深圳市旺财半导体有限公司	FSL		23+	BGA	16567	正品:QQ;2987726803	询价
深圳市勤思达科技有限公司	FSLPN60		12+	TO-263	15000	全新原装,绝对正品,公司现货供应。	询价
深圳市联世界科技有限公司	FSLM2520-1R8JP2	TOKO	24+/25+		1570	原装正品现货库存价优	询价
深圳市弘为电子有限公司	FSL05N2C	HONEY	24+	原厂封装	2000	原装现货假一罚十	询价
深圳市利加科技有限公司	FSLH137NYH	FSC	16+	DIP8	100	全新原装现货	询价
深圳市益百分电子有限公司	FSL106MR	FAI	10+	DIP8	10	原装现货价格有优势量大可以发货	询价
齐创科技(上海,北京,青岛)有限公司	FSLV16211GX_NL	原厂	23+	BGA54	25000	原装正品,假一罚十	询价
深圳市毅创腾电子科技有限公司	FSL126HR	FAIRCHILD		DIP8	2000	原装长期供货!	询价
深圳市一线半导体有限公司	FSL05A015	NIEC	24+	TO-220F-2pin	8866		询价

更多FSL供应商更新时间2026-1-30 16:50:00

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