丝印：FSL136MR；Package：DIP；Green Mode Power Switch

文件：408.79 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：FSL206MR；Package：8-LSOP；Green Mode Power Switch

文件：528.12 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

丝印：FSL206MR；Package：8-LSOP；Green Mode Power Switch

文件：528.12 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

丝印：FSL206MR；Package：8-DIP；Green Mode Power Switch

文件：528.12 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

FEATURES * Similar to TO-220AC Case * Fully Molded Isolation * Extremely Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability

文件：57.14 Kbytes 页数：6 Pages

NIEC

Force Sensors Series FS Non-compensated Force Range 0 to 500 g

[Honeywell] Force Sensors Series FS Non-compensated Force Range 0 to 500 g

文件：160.76 Kbytes 页数：4 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Features • 3.5A, 100V, rDS(ON) = 0.600Ω • Total Dose     - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event     - Safe Operating Area Curve for Single Event Effects     - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias • Dose Rat

文件：58.59 Kbytes 页数：8 Pages

Intersil

3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Features • 3.5A, 100V, rDS(ON) = 0.600Ω • Total Dose     - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event     - Safe Operating Area Curve for Single Event Effects     - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias • Dose Rat

文件：58.59 Kbytes 页数：8 Pages

Intersil

3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Features • 3.5A, 100V, rDS(ON) = 0.600Ω • Total Dose     - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event     - Safe Operating Area Curve for Single Event Effects     - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias • Dose Rat

文件：58.59 Kbytes 页数：8 Pages

Intersil

3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Features • 3.5A, 100V, rDS(ON) = 0.600Ω • Total Dose     - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event     - Safe Operating Area Curve for Single Event Effects     - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias • Dose Rat

文件：58.59 Kbytes 页数：8 Pages

Intersil