| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件:57.56 Kbytes 页数:8 Pages | INTERSIL | INTERSIL | ||
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件:57.56 Kbytes 页数:8 Pages | INTERSIL | INTERSIL | ||
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件:57.56 Kbytes 页数:8 Pages | INTERSIL | INTERSIL | ||
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件:57.56 Kbytes 页数:8 Pages | INTERSIL | INTERSIL | ||
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.11 Kbytes 页数:8 Pages | INTERSIL | INTERSIL | ||
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.11 Kbytes 页数:8 Pages | INTERSIL | INTERSIL | ||
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.11 Kbytes 页数:8 Pages | INTERSIL | INTERSIL | ||
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.11 Kbytes 页数:8 Pages | INTERSIL | INTERSIL | ||
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.11 Kbytes 页数:8 Pages | INTERSIL | INTERSIL | ||
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.11 Kbytes 页数:8 Pages | INTERSIL | INTERSIL |
技术参数
- 频率范围:
70Hz~700Hz
- 阻抗:
7.32Ω
- 谐振频率:
73.93Hz
- 额定功率:
220W
- 直径(φD):
209.2mm
- 高度:
95.95mm
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
25+23+ |
原厂原包 |
23976 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | |||
23+ |
BGA |
16567 |
正品:QQ;2987726803 |
询价 | |||
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | |||
TOKO |
24+/25+ |
1570 |
原装正品现货库存价优 |
询价 | |||
HONEY |
24+ |
原厂封装 |
2000 |
原装现货假一罚十 |
询价 | ||
FSC |
16+ |
DIP8 |
100 |
全新原装现货 |
询价 | ||
FAI |
10+ |
DIP8 |
10 |
原装现货价格有优势量大可以发货 |
询价 | ||
原厂 |
23+ |
BGA54 |
25000 |
原装正品,假一罚十 |
询价 | ||
FAIRCHILD |
DIP8 |
2000 |
原装长期供货! |
询价 | |||
NIEC |
24+ |
TO-220F-2pin |
8866 |
询价 |
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