2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

文件：46.85 Kbytes 页数：8 Pages

Intersil

3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

文件：46.38 Kbytes 页数：8 Pages

Intersil

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with

文件：58.2 Kbytes 页数：8 Pages

Intersil

Fairchild
SOP8

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

上传：深圳市毅创辉电子科技有限公司

FAIRCHILD
DIP8

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

上传：深圳市欧立现代科技有限公司