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FSL430D

2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSL430D1

2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSL430D3

2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSL430R

2A,500V,2.50Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSS430D

3A,500V,2.70Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSS430R

3A,500V,2.70Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSYE430D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopeda seriesofRadiationHardenedMOSFETsspecifically designedforcommercialandmilitaryspaceapplications. EnhancedPowerMOSFETimmunitytoSingleEventEffects (SEE),SingleEventGateRupture(SEGR)inparticular,is combinedwith

Intersil

Intersil Corporation

FSYE430R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopeda seriesofRadiationHardenedMOSFETsspecifically designedforcommercialandmilitaryspaceapplications. EnhancedPowerMOSFETimmunitytoSingleEventEffects (SEE),SingleEventGateRupture(SEGR)inparticular,is combinedwith

Intersil

Intersil Corporation

GFC430

NChannelPowerMOSFETwithlowRDS(on)

GSG

Gunter Seniconductor GmbH.

GME430R

RedPointPro-2.4GHzGyroscopicPresentationMousewithLaserPointer

IOGEAR

iogear

详细参数

  • 型号:

    FSL430D

  • 制造商:

    INTERSIL

  • 制造商全称:

    Intersil Corporation

  • 功能描述:

    2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

供应商型号品牌批号封装库存备注价格
IR
2447
TO262
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
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IR
22+
TO262
6000
终端可免费供样,支持BOM配单
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IR
23+
TO262
8000
只做原装现货
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IR
23+
TO262
7000
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GENERIC
280
全新原装 货期两周
询价
FANTASY
23+
C0603
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
24+
TO-262
27500
原装正品,价格最低!
询价
KEYEBCE
24+
DIP
9
询价
onsemi(安森美)
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
onsemi
2025+
55740
询价
更多FSL430D供应商 更新时间2025-5-11 15:00:00