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G50N60F

InsulatedGateBipolarTransistor(IGBT)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

G50N60HS

HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration

HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IGB50N60T

LowLossIGBT:IGBTinTRENCHSTOP??andFieldstoptechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IGB50N60T

LowLossIGBTinTrenchStoptechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IGB50N60T

LOWLOSSIGBTINTRENCHANDFIELDSTOPTECHNOLOGY

LowLossIGBTinTrenchandFieldstoptechnology •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature175°C •Shortcircuitwithstandtime–5µs •Designedfor: -FrequencyConverters -UninterruptedPowerSupply •TrenchandFieldstoptechnologyfor600Vapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IGP50N60T

LOWLOSSIGBTINTRENCHANDFIELDSTOPTECHNOLOGY

LowLossIGBTinTrenchandFieldstoptechnology •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature175°C •Shortcircuitwithstandtime–5µs •Designedfor: -FrequencyConverters -UninterruptedPowerSupply •TrenchandFieldstoptechnologyfor600Vapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IGP50N60T

LowLossIGBTinTrenchStopandFieldstoptechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IGW50N60T

LOWLOSSIGBTINTRENCHANDFIELDSTOPTECHNOLOGY

LowLossIGBTinTrenchandFieldstoptechnology •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature175°C •Shortcircuitwithstandtime–5µs •Designedfor: -FrequencyConverters -UninterruptedPowerSupply •TrenchandFieldstoptechnologyfor600Vapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IGW50N60T

LowLossIGBTinTrenchStopandFieldstoptechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IGW50N60T

LowLossIGBT:IGBTinTRENCHSTOP??andFieldstoptechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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