IGW50N60T分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF中文资料

IGW50N60T属于分立半导体产品的晶体管-UGBT、MOSFET-单。由英飞凌科技股份公司制造生产的IGW50N60T晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。

Low Loss IGBT in Trench and Fieldstop technology

• Very low VCE(sat) 1.5 V (typ.)

• Maximum Junction Temperature 175 °C

• Short circuit withstand time – 5µs

• Designed for :

- Frequency Converters

- Uninterrupted Power Supply

• Trench and Fieldstop technology for 600 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

- low VCE(sat)

• Positive temperature coefficient in VCE(sat)

• Low EMI

• Low Gate Charge

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/