Insulated Gate Bipolar Transistor (IGBT)

文件：176.19 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh

文件：355.61 Kbytes 页数：11 Pages

Infineon

英飞凌

LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY

Low Loss IGBT in Trench and Fieldstop technology • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Frequency Converters - Uninterrupted Power Supply • Trench and Fieldstop technology for 600 V applications

文件：402.03 Kbytes 页数：13 Pages

Infineon

英飞凌

Low Loss IGBT in TrenchStop technology

文件：467.71 Kbytes 页数：12 Pages

Infineon

英飞凌