High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh

文件：355.61 Kbytes 页数：11 Pages

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丝印：G50N60HS；Package：PG-TO-247-3；High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh

文件：355.61 Kbytes 页数：11 Pages

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High Speed IGBT in NPT-technology

•30% lower Eoffcompared to previous generation\n•Short circuit withstand time – 10 µs\n•Designed for operation above 30 kHz\n•NPT-Technology for 600V applications offers:\n- parallel switching capability\n- moderate Eoffincrease with temperature\n- very tight parameter distribution\n• High rugge

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LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY

Low Loss IGBT in Trench and Fieldstop technology • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Frequency Converters - Uninterrupted Power Supply • Trench and Fieldstop technology for 600 V applications

文件：402.03 Kbytes 页数：13 Pages

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Low Loss IGBT in TrenchStop technology

文件：467.71 Kbytes 页数：12 Pages

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Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

文件：648.1 Kbytes 页数：12 Pages

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