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FQB3N30

300VN-ChannelMOSFET

Features •3.2A,300V,RDS(on)=2.2Ω@VGS=10V •Lowgatecharge(typical5.5nC) •LowCrss(typical6.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD3N30

300VN-ChannelMOSFET

300VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD3N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQI3N30

300VN-ChannelMOSFET

Features •3.2A,300V,RDS(on)=2.2Ω@VGS=10V •Lowgatecharge(typical5.5nC) •LowCrss(typical6.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP3N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.2A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQP3N30

300VN-ChannelMOSFET

300VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF3N30

300VN-ChannelMOSFET

Features •1.95A,300V,RDS(on)=2.2Ω@VGS=10V •Lowgatecharge(typical5.5nC) •LowCrss(typical6.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU3N30

300VN-ChannelMOSFET

300VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU3N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

HM3N30PR

SiliconN-ChannelPowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

KQB3N30

300VN-ChannelMOSFET

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KSMD3N30

300VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU3N30

300VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

STD3N30

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.1Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAGEINTUBE(SUFFIX”-1”) ■SURFACE-MOUNTINGD

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STD3N30L

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.15Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAGEINTUBE(SUFFIX”-1”) ■SURFACE-MOUNTING

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

UF3N30

3A,300VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UF3N30Z

3A,300VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

详细参数

  • 型号:

    FQD3N30TF

  • 功能描述:

    MOSFET N-CH/300V/2.4A/2.2OHM

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
harris
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
23+
N/A
49200
正品授权货源可靠
询价
VB
2019
NA
55000
绝对原装正品假一罚十!
询价
FSC/ON
23+
原包装原封 □□
1970
原装进口特价供应 QQ 1304306553 更多详细咨询 库存
询价
FAIRCHILD/仙童
23+
D-PAKTO-252
24190
原装正品代理渠道价格优势
询价
FAIRCHILD/仙童
21+
D-PAKTO-252
30000
优势供应 实单必成 可13点增值税
询价
FAIRCHILD仙童
23+
DPAK
10000
公司只做原装正品
询价
VBsemi
21+
TO252
50000
全新原装正品现货,支持订货
询价
Fairchild/ON
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原厂渠道,现货配单
询价
VBsemi
21+
TO252
10032
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多FQD3N30TF供应商 更新时间2024-4-28 17:47:00