首页 >FQD4N20LTM>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS200V RDSON(MAX.)140mΩ ID15A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
200VN-ChannelMOSFET Features •3.6A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •3.8A,200V,RDS(on)=1.35Ω@VGS=10V •Lowgatecharge(typical4.0nC) •LowCrss(typical6.0pF) •Fastswit | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET Features •3.0A,200V,RDS(on)=1.4Ω(Max.)@VGS=10V •Lowgatecharge(Typ.5.0nC) •LowCrss(Typ.5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelQFETMOSFET200V,3.0A,1.4 Features •3.0A,200V,RDS(on)=1.4Ω(Max.)@VGS=10V •Lowgatecharge(Typ.5.0nC) •LowCrss(Typ.5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelQFETMOSFET200V,3.0A,1.4 Features •3.0A,200V,RDS(on)=1.4Ω(Max.)@VGS=10V •Lowgatecharge(Typ.5.0nC) •LowCrss(Typ.5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET Features •3.6A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •3.8A,200V,RDS(on)=1.35Ω@VGS=10V •Lowgatecharge(typical4.0nC) •LowCrss(typical6.0pF) •Fastswit | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET Features •3.6A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel200V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •2.8A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
详细参数
- 型号:
FQD4N20LTM
- 功能描述:
MOSFET 200V N-Ch QFET Logic Level
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHIL |
23+ |
TO-252 |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
Fairchild仙童 |
23+ |
DPAK |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
Fairchild/ON |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
询价 | ||
FAIRCILD |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
询价 | ||
ON Semiconductor |
2022+ |
TO-252-3,DPak(2 引线 + 接片 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Fairchild |
23+ |
33500 |
询价 | ||||
ON-安森美 |
24+25+/26+27+ |
TO-252-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
Fairchild/ON |
23+ |
TO2523 DPak (2 Leads + Tab) SC |
8000 |
只做原装现货 |
询价 | ||
FAIRCHILD/仙童 |
1535+ |
417 |
询价 | ||||
VBSEMI/台湾微碧 |
23+ |
D-PAK |
50000 |
全新原装正品现货,支持订货 |
询价 |
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