丝印：FQA90N15；Package：TO-3PN；N-Channel QFET® MOSFET 150 V, 90 A, 18 mΩ

Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and wi

文件：1.32891 Mbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FQA90N15；Package：TO-3PN；N-Channel QFET® MOSFET 150 V, 90 A, 18 mΩ

Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and wi

文件：1.32891 Mbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V • Low gate charge (typical 220 nC) • Low Crss (typical 200 pF) • Fast switching • 1

文件：749.16 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Power MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V • Low gate charge (typical 220 nC) • Low Crss (typical 200 pF) • Fast switching • 1

文件：678.55 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Power MOSFET

文件：1.0998 Mbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Power MOSFET

文件：1.0998 Mbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司