100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：624.78 Kbytes 页数：8 Pages

Fairchild

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N-Channel Power MOSFET

Features • 44A, 150V, RDS(on) = 0.028Ω @VGS = 10 V • Low gate charge ( typical 135 nC) • Low Crss ( typical 135 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating

文件：740.67 Kbytes 页数：8 Pages

Fairchild

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 44A@ TC=25℃ ·Drain Source Voltage- : VDSS=150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：328.73 Kbytes 页数：2 Pages

ISC

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600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：578.42 Kbytes 页数：8 Pages

Fairchild

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800V N-Channel MOSFET

800V N-Channel MOSFET

文件：778.77 Kbytes 页数：8 Pages

Fairchild

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900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：680.08 Kbytes 页数：8 Pages

Fairchild

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 67A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.01Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：329.03 Kbytes 页数：2 Pages

ISC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5.9A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：329.24 Kbytes 页数：2 Pages

ISC

无锡固电

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：689.01 Kbytes 页数：8 Pages

Fairchild

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80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：673.56 Kbytes 页数：8 Pages

Fairchild

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