500V N-Channel MOSFET

Features • 7.2A,500V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 20 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：691.7 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=7.2A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.73mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：328.69 Kbytes 页数：2 Pages

ISC

无锡固电

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

文件：678.29 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Power Line EMC Filters

文件：187.26 Kbytes 页数：1 Pages

TDK

东电化

Power Line EMC Filters

文件：187.25 Kbytes 页数：1 Pages

TDK

东电化

800V N-Channel MOSFET

文件：803.36 Kbytes 页数：8 Pages

Fairchild

仙童半导体

800V N-Channel MOSFET

文件：801.49 Kbytes 页数：9 Pages

Fairchild

仙童半导体

800V N-Channel MOSFET

文件：801.49 Kbytes 页数：9 Pages

Fairchild

仙童半导体

800V N-Channel MOSFET

文件：803.36 Kbytes 页数：8 Pages

Fairchild

仙童半导体

800V N-Channel MOSFET

文件：803.36 Kbytes 页数：8 Pages

Fairchild

仙童半导体