FQAF6N70

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=4.74A@TC=25℃ ·DrainSourceVoltage- :VDSS=700V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

FQAF6N80

800V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FQAF6N80

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=4.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

FQAF6N90

900V N-Channel MOSFET

Features •4.5A,900V,RDS(on)=1.9Ω@VGS=10V •Lowgatecharge(typical40nC) •LowCrss(typical17pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQAF70N08

80V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FQAF70N08

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=53.3A@TC=25℃ ·DrainSourceVoltage- :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.017Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

FQAF70N10

100V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FQAF70N10

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=45A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.023Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

FQAF70N15

N-Channel Power MOSFET

Features •44A,150V,RDS(on)=0.028Ω@VGS=10V •Lowgatecharge(typical135nC) •LowCrss(typical135pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating

FQAF70N15

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc