N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applicati

文件：547.01 Kbytes 页数：5 Pages

FUJI

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=5.5A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.3Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.59 Kbytes 页数：2 Pages

ISC

无锡固电

功率MOSFET 600V-700V

FUJI

富士通

N-Channel Power Field Effect Transistor

Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl

文件：60.77 Kbytes 页数：5 Pages

HSMC

华昕

N-Channel Power Field Effect Transistor

Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl

文件：60.77 Kbytes 页数：5 Pages

HSMC

华昕

N-Channel Power Field Effect Transistor

Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl

文件：60.77 Kbytes 页数：5 Pages

HSMC

华昕