N-CHANNEL SILICON POWER MOSFET

Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High aval

文件：502.53 Kbytes 页数：5 Pages

FUJI

富士通

功率MOSFET 800V-900V

FUJI

富士通

900V N-Channel Super Junction MOSFET

Features - Very Low FOM (RDS(on) X Qg) - Extremely low switching loss - Excellent stability and uniformity - 100% Avalanche Tested - Built-in ESD Diode Applications - Switch Mode Power Supply (SMPS) - TV power & LED Lighting Power - AC to DC Converters - Telecom - Key Parameters

文件：632.01 Kbytes 页数：7 Pages

WPMTEK

维攀科技

N-CHANNEL SILICON POWER MOSFET

Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High aval

文件：502.53 Kbytes 页数：5 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

文件：634.7 Kbytes 页数：5 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

文件：634.7 Kbytes 页数：5 Pages

FUJI

富士通