N-CHANNEL SILICON POWER MOSFET

Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High aval

文件：423.76 Kbytes 页数：5 Pages

FUJI

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=7.5A@ TC=25℃ · Drain Source Voltage -VDSS=500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.79Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.19 Kbytes 页数：2 Pages

ISC

无锡固电

功率MOSFET 400V-500V

FUJI

富士通

N-Channel Enhancement

InPower Product Lines

文件：54.71 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Power MOSFET 500 V, 0.69 

文件：146.17 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET 500 V, 0.85

文件：123.55 Kbytes 页数：6 Pages

ONSEMI

安森美半导体