FGH60N60SFDTU数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

Using novel field stop IGBT technology, this IGBT offers the optimum performance for solar inverter, UPS, welder, and PFC applications where low conduction and switching losses are essential.

特性 Features

• High Current Capability
• Low Saturation Voltage : VCE(sat) = 2.3V @ IC = 60 A
• High Input Impedance
• Fast Switching
• RoHS Compliant

应用 Application

• Solar Inverter
• UPS
• Welder
• PFC

简介

FGH60N60SFDTU属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的FGH60N60SFDTU晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。