FGH40T120SQDNL4中文资料IGBT，超场截止数据手册ONSEMI规格书

描述 Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for UPS and solar applications. Incorporated into the device
is a soft and fast co−packaged free wheeling diode with a low forward
voltage.

特性 Features

• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• These are Pb−Free Devices

应用 Application

• Solar inverterUPSWelding

简介

FGH40T120SQDNL4属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的FGH40T120SQDNL4晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。