丝印：FGB40T65SPD；Package：D2PAK-3；IGBT - Field Stop, Trench 650 V, 40 A

General Description Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 50 V higher blocking voltage and rugged high

文件：2.02757 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FGB40T65SPD；Package：D2PAK-3；IGBT - Field Stop, Trench 650 V, 40 A

General Description Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 50 V higher blocking voltage and rugged high

文件：2.02757 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

Field-Stop Trench IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.0V@IC=40A · High Current Capability · High Input Impedance · Fast Switching APPLICATIONS · Motor Driver · Automotive Chargers · Onboard Charge · AirCon Compressor

文件：370.79 Kbytes 页数：3 Pages

ISC

无锡固电

Field Stop Trench IGBT

文件：946.61 Kbytes 页数：11 Pages

ONSEMI

安森美半导体