EcoSPARK 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT

Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application

文件：966.83 Kbytes 页数：9 Pages

ONSEMI

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丝印：FGB3056；Package：TO-263AB；EcoSPARK® 300mJ, 560V, N-Channel Ignition IGBT

Features - SCIS Energy = 300mJ at TJ = 25oC - Logic Level Gate Drive Applications - Automotive lgnition Coil Driver Circuits - Coil On Plug Applications

文件：2.95943 Mbytes 页数：8 Pages

ONSEMI

安森美半导体

600V, SMPS II Series N-Channel IGBT

General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc

文件：177.95 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

600V, SMPS II Series N-Channel IGBT

General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc

文件：179.31 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re

文件：281.66 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re

文件：287.27 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re

文件：287.27 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体

600V, SMPS II Series N-Channel IGBT

General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc

文件：179.31 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

丝印：FGB3245G2；Package：D2PAK-3；ECOSPARK2 320 mJ, 450 V, N-Channel Ignition IGBT

General Description The FGB3245G2−F085 and FGD3245G2 are N−channel IGBTs designed in onsemi’s ECOSPARK−2 technology which helps in eliminating external protection circuitry. The technology is optimized for driving the coil in the harsh environment of automotive ignition systems and offers out

文件：344.15 Kbytes 页数：10 Pages

ONSEMI

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丝印：FGB3440G2；Package：TO-263AB；EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT

Features - SCIS Energy = 335mJ at TJ = 25oC - Logic Level Gate Drive - Qualified to AEC Q101 - RoHS Compliant Applications - Automotive lgnition Coil Driver Circuits - Coil On Plug Applications

文件：1.26515 Mbytes 页数：9 Pages

ONSEMI

安森美半导体