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FGB30N6S2D中文资料仙童半导体数据手册PDF规格书
FGB30N6S2D规格书详情
General Description
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive.
Features
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125°C
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
产品属性
- 型号:
FGB30N6S2D
- 功能描述:
IGBT 晶体管 Dl 600V Size 3 N-Ch
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集电极—发射极最大电压
- VCEO:
650 V
- 集电极—射极饱和电压:
2.3 V
- 栅极/发射极最大电压:
20 V 在25
- C的连续集电极电流:
150 A
- 栅极—射极漏泄电流:
400 nA
- 功率耗散:
187 W
- 封装/箱体:
TO-247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
FAI |
23+ |
65480 |
询价 | ||||
FSC |
22+ |
NA |
27003 |
全新原装正品现货 |
询价 | ||
Fairchild/ON |
22+ |
TO263AB |
9000 |
原厂渠道,现货配单 |
询价 | ||
Fairchild仙童 |
22+ |
TO263AB |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
FAIRC |
23+ |
原厂原装 |
25000 |
专业优势供应 |
询价 | ||
ON Semiconductor |
2022+ |
TO-263AB |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Fairchild/ON |
21+ |
TO263AB |
13880 |
公司只售原装,支持实单 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
NA/ |
7500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
FAIRCHILD |
22+23+ |
TO263 |
24055 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 |