Bi-directional TVS Diode Array

Features • Bidirectional Transil Functions • Low Clamping Voltage • Compliance with IEC 61000-4-2(ESD) immunity test Air Discharge: ±30kV Contact Discharge: ±30kV Main Applications • Digital camera • Digital TV and videos • Notebook computers

文件：146.86 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

Bi-directional TVS Diode Array

Features  Bidirectional Transil Functions  Low Clamping Voltage  Compliance with IEC 61000-4-2(ESD) immunity test Air Discharge: ±30kV Contact Discharge: ±30kV Main Applications  Digital camera  Digital TV and videos  Notebook computers

文件：148.84 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

600V, 20A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(

文件：387.73 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

600V, 20A Field Stop IGBT

General Description Using novel field-stop IGBT technology, Fairchild’s new series of field-stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential. Features • High current capability • Low sat

文件：433.75 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

600V, SMPS II Series N-Channel IGBT

General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re

文件：183.25 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re

文件：232.38 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode

General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re

文件：231.95 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode

General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re

文件：231.95 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT

General Description The FGB3040CS is an lgnition IGBT that offers outstanding SCIS capability along with a ratiometric emitter current sensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is provided through a fourth (sense) lead. This signal provides a cu

文件：428.5 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

丝印：FGB3040G2；Package：D2PAK-3；ECOSPARK 2 300 mJ, 400 V, N-Channel Ignition IGBT

Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • Coil On Plug Applications

文件：811.37 Kbytes 页数：13 Pages

ONSEMI

安森美半导体