600V, 20A Field Stop IGBT

General Description Using novel field-stop IGBT technology, Fairchild’s new series of field-stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential. Features • High current capability • Low sat

文件：433.75 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

IGBT，600V，20A，场截止

飞兆半导体的场截止 IGBT 系列采用新型场截止 IGBT 技术，为光伏逆变器、UPS、焊机和 PFC 等低导通和开关损耗至关重要的应用提供了最佳性能。 •高电流能力\n•低饱和电压：VCE(sat) =2.2V @ IC = 20A\n•高输入阻抗\n•快速开关：EOFF =8uJ/A\n•符合 RoHS 标准;

ONSEMI

安森美半导体

600V, 20A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch ing losses are essential. Features • High Current Capability • Low Saturation Voltage: VC

文件：796.47 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

High current capability, High input impedance

文件：797.47 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

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DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体