丝印：FGA30S120P；Package：TO-3P；1300 V, 30 A Shorted-anode IGBT

Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.75 V @ IC = 30 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode

文件：363.66 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：FGA30S120P；Package：TO-3P；1300 V, 30 A Shorted-anode IGBT

Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.75 V @ IC = 30 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode

文件：363.66 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT

FEATURES · Low Saturation Voltage:VCE(sat)=1.75V@IC=30A · High Speed Switching · High Input Impedance APPLICATIONS · General Purpose Inverters · Automotive Chargers · UPS,PFC · Induction Heating

文件：331.45 Kbytes 页数：3 Pages

ISC

无锡固电

Shorted AnodeTM IGBT

文件：646.77 Kbytes 页数：8 Pages

Fairchild

仙童半导体