Single N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS =

文件：102.87 Kbytes 页数：5 Pages

Fairchild

仙童半导体

丝印：FDS6680；Package：SOP-8；30V N-Channel MOSFET

Features • Ultra-low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability (VGS = 10V) VDS (V) =30V ID = 12 A RDS(ON)

文件：408.77 Kbytes 页数：6 Pages

UMW

友台半导体

Single N-Channel, Logic Level, PowerTrench짰 MOSFET

文件：202.11 Kbytes 页数：5 Pages

Fairchild

仙童半导体

N-Channel Enhancement Mode Power MOSFET

Features  VDS= 20V, ID= 10 A RDS(ON)

文件：1.76729 Mbytes 页数：5 Pages

Bychip

百域芯

30V N-Channel PowerTrench SyncFET

General Description The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky dio

文件：551.45 Kbytes 页数：8 Pages

Fairchild

仙童半导体

30V N-Channel PowerTrench SyncFET

General Description The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky dio

文件：551.45 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Single N-Channel, Logic Level, PowerTrench짰 MOSFET

文件：202.11 Kbytes 页数：5 Pages

Fairchild

仙童半导体

30V N-Channel PowerTrench SyncFET

文件：1.01191 Mbytes 页数：8 Pages

Fairchild

仙童半导体

30V N-Channel PowerTrench SyncFET

文件：1.01191 Mbytes 页数：8 Pages

Fairchild

仙童半导体

单 N 沟道，逻辑电平，PowerTrench® MOSFET，30V，12.5A，9.5mΩ

该N沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。 •12.5 A，30 V\n•RDS(ON) = 9.5 mΩ @ VGS = 10 V\n•RDS(ON) = 13 mΩ @ VGS = 4.5 V\n•超低栅极电荷\n•高性能沟道技术可实现极低的RDS(on)\n•高功率和高电流处理能力;

ONSEMI

安森美半导体