FDR842P

P-Channel 1.8V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel–1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–11A,–12V RDS(ON)=9mΩ@VGS=–4.5V RDS(ON)=12mΩ@VGS=–2.5V RDS(ON)=16mΩ

GL842

USB2.02-in-1ScannerController

HAH842

SMTPowerInductor

HMC842

RFATEApplications

HRD-842

8CH4MH.264AHDDVR

•H.264supported •TVI,CVI(Max.2MP),AnalogCameraInputSupport •Upto120/100(4M)fpsRecordingRate •Upto240/200(1080p)fpsRecordingRate •HDMI/VGAVideoOutput •8CHAudioInputs/1CHAudioOutput •Upto4InternalHDDs •CoaxialCable(Pelco-C,ACP) •SmartPhoneSupp

IPM-C842

MiniatureIntegratedPowerMonitor

IPM-L842

MiniatureIntegratedPowerMonitor

IRF842

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR

IRF842

TRANSISTORSN-CHANNEL

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORSN-CHANNEL

IRF842

N-ChannelPowerMOSFETs,8A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedsepeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers.