isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

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ISC

无锡固电

N-Channel MOSFET, FRFET 500V, 6A, 1.15OHM

文件：549.31 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

MOSFET N-CH 500V 6A TO-220F

ONSEMI

安森美半导体

Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)

VDSS 500V Rds(on) max 0.52Ω ID 6.6A Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch

文件：96.01 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Features and Benefits ● Super Fast body diode eliminates the need for external diodes in ZVS applications ● Lower Gate charge results in simpler drive requirements ● Enhanced dV/dt capabilities offer improved ruggedness ● Higher Gate Voltage Threshold Offers Improved Noise Immunity Applicatio

文件：216.64 Kbytes 页数：9 Pages

IRF

N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

文件：150.37 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体