丝印：FDP8443；Package：TO-220AB；N-Channel PowerTrench® MOSFET 40V, 80A, 3.5mΩ

Features - Typ rDS(on) = 2.7mΩ at VGS = 10V, ID = 80A - Typ Qg(10) = 142nC at VGS = 10V - Low Miller Charge - Low Qrr Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - Qualified to AEC Q101 - RoHS Compliant Applications - Automotive Engine Control - Powertrain Managemen

文件：555.13 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 110A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.8mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：332.77 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.7mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：355.18 Kbytes 页数：3 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：355.27 Kbytes 页数：3 Pages

ISC

无锡固电

N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features ■ rDS(ON)

文件：231.85 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

100 V N-Channel MOSFET

Features (VGS = 10V) VDS (V) =100V ID = 76 A RDS(ON)

文件：822.39 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：8D5N10C；Package：TO-220；100 V N-Channel MOSFET

Features (VGS = 10V) VDS (V) =100V ID = 76 A RDS(ON)

文件：822.39 Kbytes 页数：7 Pages

UMW

友台半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

丝印：FDP8N50NZ；Package：TO-220；N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m

Features • RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100 Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED TV • Uninterruptible Power Supply • Lighting • AC-DC Power

文件：882.62 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：333.31 Kbytes 页数：2 Pages

ISC

无锡固电