FDMS86101

类型：N沟道 漏源电压(Vdss)：100V 连续漏极电流(Id)：12.4A 功率(Pd)：2.5W 导通电阻(RDS(on)@Vgs,Id)：8mΩ@10V,13A N 沟道，PowerTrench MOSFET，100V，60A，8mΩ 此 N 沟道 MOSFET 是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的

FDMS86101

N-Channel PowerTrench짰 MOSFET 100 V, 49 A, 8 m?

FDMS86101

N-Channel PowerTrench짰 MOSFET

FDMS86101DC

N-Channel Dual CoolTM Power Trench짰 MOSFET 100 V, 60 A, 7.5 m廓

DualCool™packagingtechnology,providesbothbottom-andtop-sidecoolinginaPQFNpackage.NotonlyisthePQFNfootprintanindustrystandard,itprovidesthedesignerwithperformanceflexibility.Withenhanceddualpaththermalperformanceandimprovedparasiticsoveritswire-bondedpredece

FDMS86101DC

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

DualCool™packagingtechnology,providesbothbottom-andtop-sidecoolinginaPQFNpackage.NotonlyisthePQFNfootprintanindustrystandard,itprovidesthedesignerwithperformanceflexibility.Withenhanceddualpaththermalperformanceandimprovedparasiticsoveritswire-bondedpredece

FDMS86101DC

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage-:VDSS=100V(Min) ·FastSwitchingSpeed ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·PrimaryDC-DCMOSFET ·SecondarySynchronousRectifier ·LoadSwitch

FDMS86101_12

N-Channel PowerTrench짰 MOSFET 100 V, 60 A, 8 m廓

FDMS86101A

N-Channel PowerTrench짰 MOSFET 100 V, 60 A, 8 m廓