N 沟道 PowerTrench® MOSFET 100V，60A，8mΩ

此N沟道MOSFET采用飞兆半导体先进的Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 • Shielded Gate MOSFET Technology\n•VGS = 10V，ID = 13 A时，最大rDS(on) = 8mΩ\n•VGS = 6 V，ID = 9.5 A时，最大rDS(on) = 13.5mΩ\n•先进的封装技术和硅技术相结合，实现了低rDS(on)和高效率\n•MSL1耐用封装设计\n•100%经过UIL测试\n•100%经过Rg测试\n•符合RoHS标准;

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 100 V, 60 A, 8 m廓

文件：310.9 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N-Channel Dual CoolTM Power Trench짰 MOSFET 100 V, 60 A, 7.5 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：291.45 Kbytes 页数：8 Pages

Fairchild

仙童半导体

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：1.16337 Mbytes 页数：2 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Fast Switching Speed ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Primary DC-DC MOSFET ·Secondary Synchronous Rectifier ·Load Switch

文件：294.76 Kbytes 页数：2 Pages

ISC

无锡固电