N-Channel Dual CoolTM Power Trench짰 MOSFET 100 V, 60 A, 7.5 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：291.45 Kbytes 页数：8 Pages

Fairchild

仙童半导体

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：1.16337 Mbytes 页数：2 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Fast Switching Speed ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Primary DC-DC MOSFET ·Secondary Synchronous Rectifier ·Load Switch

文件：294.76 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道，双 CoolTM 56 PowerTrench® MOSFET，100V，60A，7.5mΩ

此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench®工艺生产，该工艺融入了栅极屏蔽技术。先进的硅技术和 Dual Cool™ 封装技术完美融合，可在提供最小 rDS(on)的同时通过极低的结至环境热阻保持卓越的开关性能。 •栅极屏蔽 MOSFET 技术\n•Dual Cool™顶侧冷却PQFN封装\n•VGS = 10 V，ID = 14.5 A时，Max rDS(on) = 7.5 mΩ\n•VGS = 6 V，ID = 11.5 A时，最大rDS(on) = 12mΩ\n•通态电阻 rDS(on)极低的高性能技术\n•100% 经过 UIL 测试\n•符合 RoHS 标准;

ONSEMI

安森美半导体