P-Channel 1.8V Specified PowerTrench MOSFET

General Description This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. Features • –5 A, –20 V. RDS(ON) = 44 mΩ @ V

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Fairchild

仙童半导体

P-Channel 1.8V Specified PowerTrench MOSFET

ONSEMI

安森美半导体

SMT COMMON MODE CHOKES

文件：345.93 Kbytes 页数：3 Pages

pulse

Ultrafast Soft Recovery Rectifier Diode

FEATURES · Ultrafast recovery time · Low Forward Voltage · High Blocking Voltage · Low Leakage Current APPLICATIONS ·Snubber Diode ·Induction Heating ·Uninterruptible Power Supply(UPS) ·High Speed Rectifier

文件：519.97 Kbytes 页数：3 Pages

ISC

无锡固电

Low Power 2.7V Single Supply CMOS Operational Amplifiers

文件：792.91 Kbytes 页数：20 Pages

NSC

国半