P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • –5.8 A,

文件：148.98 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-5.8A，30mΩ

此P沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。 这些器件非常适合电池供电应用： 负载开关和功率管理、电池电源电路和DC/DC转换。 •-5.8A, -20V, RDS(on) = 30mΩ @ VGS = -4.5V RDS(on) = 43mΩ @ VGS = -2.5V\n•低栅极电荷\n•高性能沟道技术可实现极低的RDS(on)\n•SuperSOT™ ¨C6封装： 小尺寸（比标准 SO¨C8 小 72%）；薄型（1 mm 厚）;

ONSEMI

安森美半导体

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● Glass passivated junction in P600 package ● 6 ampere operation at TA=60 ¢J with no thermal runaway ● Exce

文件：52.31 Kbytes 页数：2 Pages

PANJIT

強茂

FAST SWITCHING RECOVERY RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)

FEATURES ● Low cost ● Diffused junction ● Low forward voltage drop ● High current capability Fast switching for high efficiency ● The plastic meterial carries U/L recognition 94V-O ● Exceeds environmental standards of MIL-S-19500/228

文件：52.26 Kbytes 页数：2 Pages

PANJIT

強茂

GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)

VOLTAGE 50 to 800 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • Exceeds environmental standards of MIL-S-19500/228. • Ultra Fast switching for high efficiency. • Bot

文件：68.83 Kbytes 页数：2 Pages

PANJIT

強茂