Digital FET, Dual N-Channel

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

文件：72.12 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

Digital FET, Dual N-Channel

General Description\nThese dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especial ■ 25 V, 0.68 A continuous, 2 A Peak.\n   RDS(ON) = 0.6 W @ VGS = 2.7 V\n   RDS(ON) = 0.45 W @ VGS= 4.5 V.\n■ Very low level gate drive requirements allowing direct\n   operation in 3V circuits. VGS(th) < 1.5 V.\n■ Gate-Source Zener for ESD ruggedness.\n   6kV Human Body Model\n■ Replace multiple NPN;

ONSEMI

安森美半导体

Digital FET, Dual N-Channel

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

文件：72.12 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

双 N 沟道，数字 FET，25V，0.68A，0.45Ω

这些双N沟道逻辑电平增强模式场效应晶体管采用飞兆半导体专有的高电池密度DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低导通阻抗而定制的。 该器件特别为低电压应用设计，以替代数字晶体管。 由于不需要偏置电阻，该N沟道FET能替代一些具有不同偏置电阻的数字晶体管，如IMHxA系列。 •-25V、-0.68A（连续值）、-2A（峰值） \n•RDS(ON) = 0.6 Ω @ VGS = 2.7 V\n•RDS(ON) = 0.45 Ω @ VGS= 4.5 V\n•栅极驱动电平要求极低，从而可在3V电路中直接运行。 VGS(th) < 1.5V。\n•栅-源齐纳二极管增强耐静电放电(ESD)能力。 >6kV人体模型\n•用一个DMOS FET替代多个NPN数字晶体管（IMHxA系列）;

ONSEMI

安森美半导体