FDC6303中文资料仙童半导体数据手册PDF规格书

General Description

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.

特性 Features

■ 25 V, 0.68 A continuous, 2 A Peak.

RDS(ON) = 0.6 W @ VGS = 2.7 V

RDS(ON) = 0.45 W @ VGS= 4.5 V.

■ Very low level gate drive requirements allowing direct

operation in 3V circuits. VGS(th) < 1.5 V.

■ Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

■ Replace multiple NPN digital transistors (IMHxA series)

with one DMOS FET.