Digital FET, Dual P-Channel

General Description These Dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

文件：76.01 Kbytes 页数：4 Pages

Fairchild

仙童半导体

双 P 沟道，数字 FET，-25V，-0.12A，10Ω

这些P沟道逻辑电平增强模式功率场效应晶体管采用飞兆专有的高密度、DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低导通阻抗而定制的。 此类器件专为低电压应用设计，以替代负载开关应用中的数字晶体管。 由于不需要偏置电阻，该P沟道FET能替代一些具有不同偏置电阻的数字晶体管，如IMBxA系列。 •-25V、-0.12A（连续值）、-0.5A（峰值） \n•RDS(ON) = 13 Ω @ VGS= -2.7 V\n•RDS(ON) = 10 Ω @ VGS = -4.5 V\n•栅极驱动电平要求极低，从而可在3V电路中直接运行。 VGS(th) < 1.5V\n•栅-源齐纳二极管增强耐静电放电(ESD)能力。 >6kV人体模型\n•用一个DMOS FET替代多个PNP数字晶体管（IMHxA系列）;

ONSEMI

安森美半导体

Dual P-Channel, Digital FET

General Description These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

文件：302.73 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Dual P-Channel, Digital FET

General Description These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

文件：302.73 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Microprocessor CORE Voltage Regulator Multi-Phase Buck PWM Controller

The HIP6302 multi-phase PWM control IC together with its companion gate drivers, the HIP6601, HIP6602 or HIP6603 and Intersil MOSFETs provides a precision voltage regulation system for advanced microprocessors. Multiphase power conversion is a marked departure from earlier single phase converter c

文件：184.16 Kbytes 页数：17 Pages

Intersil