Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2

文件：57.33 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2

文件：181.12 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Integrated Load Switch

文件：91.19 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：331K；Package：SOT23-6；Load Switch with Level-Shift

Product Summary * -2.8A,-8V * RDS(ON)=45m2 @ VGS=4.5V(Typ) * RDS(ON)=50m2 @ VGS=2.5V(Typ) * RDS(ON)-80m 2 @ VGS=1.8V(Typ) * FDC6331L Pin to Pin fully compatible

文件：3.59579 Mbytes 页数：7 Pages

TECHPUBLIC

台舟电子

Integrated Load Switch

文件：91.19 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

集成式负载开关

此器件特别适合便携式电子设备的紧凑型电源管理，输入电压为2.5V至8V，输出电流为2.8A。 该负载开关集成了一个小型N沟道功率MOSFET (Q1)，从而在一个微小的SuperSOT™-6封装中驱动一个大型P沟道功率MOSFET (Q2)。 •–2.8 A，–8 V。\n•VGS = –4.5 V时，RDS(ON) = 55 mΩ\n•VGS = –2.5 V时，RDS(ON) = 70 mΩ\n•VGS = –1.8 V时，RDS(ON) = 100 mΩ\n•控制MOSFET (Q1)包含增强耐静电放电能力的齐纳二极管保护（>6KV人体模型）\n•高性能沟道技术可实现极低的RDS(ON);

ONSEMI

安森美半导体

Package：SOT-23-6 细型，TSOT-23-6；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR SWITCH P-CH 1:1 SUPERSOT6

ONSEMI

安森美半导体