丝印：312F；Package：SOT23-6；Dual P-Channel 20V (D-S) MOSFET

Features Vps =-20V,Ip =-3A Ros(on) =120m Q @ Ves=-2.5V (Typ) Rosion) =85m Q @ Ves=-4.5V (Typ) High Power and current handing capability Lead free product is acquired Surface Mount Package

文件：2.10624 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

Dual P-Channel 1.8V PowerTrench Specified MOSFET

文件：165.22 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

双 P 沟道，PowerTrench® MOSFET，1.8V 指定，-12V，-2.5A，90mΩ

这些P沟道1.8V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大程度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。 •-2.5A，-12V。 RDS(ON) = 90mΩ @ VGS = -4.5V RDS(ON) = 125mΩ @ VGS = -2.5V RDS(ON) = 200mΩ @ VGS = -1.8V\n•高性能沟道技术可实现极低的RDS(on)\n•SuperSOT™-6封装： 小尺寸（比标准SO-8小72%）；薄型（1mm厚）;

ONSEMI

安森美半导体

Dual P-Channel, Digital FET

General Description These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a repl

文件：123.67 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual P-Channel Enhancement Mode MOSFET

Application Battery protection » Load switch Power management « Power Supply Converter Circuits

文件：2.37476 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

Dual P-Channel, Digital FET

文件：217.71 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司