丝印：F8707；Package：SO-8；HEXFET Power MOSFET

Description The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are critical in synchronous buck operationincluding Rds(on) and gate charge to reduce both conduction and swit

文件：248.94 Kbytes 页数：9 Pages

IRF

丝印：F8707；Package：SO-8；Fully Characterized Avalanche Voltage and Current

文件：254.47 Kbytes 页数：9 Pages

IRF

Control MOSFET of Sync-Buck  Converters used for Notebook  Processor Power

文件：252.53 Kbytes 页数：9 Pages

IRF

N-Channel Enhancement Mode MOSFET

Description The IRF8707 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =15A RDS(ON)

文件：552.16 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

Control MOSFET of Sync-Buck  Converters used for Notebook  Processor Power

文件：252.53 Kbytes 页数：9 Pages

IRF

Control MOSFET of Sync-Buck  Converters used for Notebook  Processor Power

文件：252.53 Kbytes 页数：9 Pages

IRF