首页 >F-591-C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PNPSiliconEpitaxialPlanarTransistor FEATURES ●Highsaturationvoltage. ●ComplementaryToFMMT491. ●ExcellentHFELinearity. APPLICATIONS ●Switchingappilication. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
PNPSILICONPLANARMEDIUMPOWERTRANSISTOR FEATURES LowequivalentonresistanceRCE(sat)=350mΩat1A PARTMARKINGDETAIL-91A COMPLEMENTARYTYPE-FMMT491A | Zetex Zetex Semiconductors | Zetex | ||
SOT23PNPsiliconplanarmediumpowertransistor Features •BVCEO>-40V •IC=-1AHighContinuousCurrent •ICM=-2APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
SOT23PNPsiliconplanarmediumpowertransistor Features •BVCEO>-40V •IC=-1AHighContinuousCurrent •ICM=-2APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
SOT23PNPsiliconplanarmediumpowertransistor Features •BVCEO>-40V •IC=-1AHighContinuousCurrent •ICM=-2APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
40VPNPMEDIUMPOWERHIGHPERFORMANCETRANSISTORINSOT23 Features •BVCEO>-40V •IC=-1AHighContinuousCurrent •ICM=-2APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
BipolarPNPDeviceinaHermeticallysealedLCC1 | SEME-LAB Seme LAB | SEME-LAB | ||
PNPTransistor | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半导体东莞市平晶半导体科技有限公司 | PJSEMI | ||
60VPNPMEDIUMPOWERTRANSISTOR | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
60VPNPMEDIUMPOWERTRANSISTORINSOT23 Description ThisBipolarJunctionTransistor(BJT)hasbeendesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>-60V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •RSAT=295mΩforaLowEquivalentOn-Resistance •hFECha | DIODESDiodes Incorporated 美台半导体 | DIODES |
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