丝印：591；Package：SOT-23；PNP Transistor

文件：1.97968 Mbytes 页数：4 Pages

PJSEMI

平晶半导体

60V PNP MEDIUM POWER TRANSISTOR

文件：574.82 Kbytes 页数：7 Pages

DIODES

美台半导体

60V PNP MEDIUM POWER TRANSISTOR IN SOT23

Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -60V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • RSAT = 295mΩ for a Low Equivalent On-Resistance • hFE Cha

文件：470.47 Kbytes 页数：7 Pages

DIODES

美台半导体

60V PNP MEDIUM POWER TRANSISTOR

文件：574.82 Kbytes 页数：7 Pages

DIODES

美台半导体