Medium power PNP transistor in SOT23

Features • BVCEO > -60V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • Rsat = 295mΩ for a Low Equivalent On-Resistance • hFE characterised up to -2A for High Current Gain Hold Up • Complementary NPN Type: FMMT491 • Totally Lead-Free & Fully RoHS Compliant

文件：298.08 Kbytes 页数：8 Pages

DIODES

美台半导体

60V PNP MEDIUM POWER TRANSISTOR IN SOT23

Features • BVCEO > -60V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • Rsat = 295mΩ for a Low Equivalent On-Resistance • hFE characterised up to -2A for High Current Gain Hold Up • Complementary NPN Type: FMMT491 • Totally Lead-Free & Fully RoHS Compliant

文件：476.51 Kbytes 页数：7 Pages

DIODES

美台半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 1A SOT23-3

DIODES

美台半导体

60V PNP MEDIUM POWER TRANSISTOR IN SOT23

Features • BVCEO > -60V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • Rsat = 295mΩ for a Low Equivalent On-Resistance • hFE characterised up to -2A for High Current Gain Hold Up • Complementary NPN Type: FMMT491 • Totally Lead-Free & Fully RoHS Compliant

文件：476.51 Kbytes 页数：7 Pages

DIODES

美台半导体

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR COMPLEMENTARY TYPE FZT491 PARTMARKING DETAIL - FZT591

文件：41.62 Kbytes 页数：1 Pages

ZETEX

SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

Features • BVCEO > -60V • IC = -1A High Continuous Current • Low Saturation Voltage VCE(sat)

文件：52.39 Kbytes 页数：1 Pages

DIODES

美台半导体